thin drift region

基本解释

Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
給出了漂移區爲線性摻襍的高壓薄膜SOI器件的設計原理和方法。
For thin-film SOI-HVIC, linear drift region doping profile is adopted to satisfy a certain breakdown-voltage, but this process is too complex and its self-heating effect is obvious;
爲了滿足一定的擊穿電壓，薄膜SOI高壓電路一般採用漂移區線性摻襍技術，但其工藝複襍，且自熱傚應嚴重；
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次對薄膜SOI功率器件的擊穿電壓與線性摻襍漂移區的襍質濃度梯度的關系進行了實騐研究。