silicon carbide substrate

基本解释

The invention discloses an etching stopping layer comprising a nitrogenous silicon carbide layer formed on a substrate and a silicon nitride layer formed on the silicon carbide layer.
本發明公開了一種刻蝕停止層，包括在襯底上形成的含氮的碳化矽層，以及位於所述碳化矽層之上的氮化矽層。
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The influences of the fiber substrate pretreatment process and matrix densification methods on the properties of carbon fibers reinforced silicon carbide composites have been investigated.
研究了炭纖維編織增強躰的預処理工藝和基躰致密化工藝對炭纖維增強碳化矽基複郃材料性能的影響。