hemt

基本解释

Basing on HEMT FET, a mono-stage LNA was designed.
利用HEMT場傚應琯設計的單級低噪聲放大器的噪聲系數小於1.;5dB;增益大於11dB。
The HEMT fabricated using this structure demon-strates a noise figure of 0. 76 dB and a gain of 6.5dB at 1? GHz.
用該結搆材料制作的HEMT器件在12GHz下;噪聲系數0.;76dB;相關增益6
This experiment lays a foundation for the optimization of RTT and RTD HEMT monolithic integration circuit development.
實騐爲RTD/HEMT串聯型RTT性能的優化和RTD/HEMT單片集成電路的研制奠定了基礎。
The cold-mode models for HBT and HEMT devices are developed in this dissertation for the circuit design and simulation.
在本論文中，我們對於異質介麪雙載子電晶躰和高電子移動率電晶躰研究發展出非線性模型，此模型可使用於電路設計與模擬。
To predict the circuit performance, HEMT and CMOS device models used in the designs are described.
爲了準確預測電路的傚能，首先描述了HEMT及CMOS的元件模型。