dopant concentration

基本解释

The doping time and concentration of dopant affect conductivity I2-doped PTV film has good air stability in six months.
PTV膜具有较好的力学性能、I＿2掺杂PTV膜导电率有极好的空气稳定性。
Therefore the dopant concentration profile measured by this method is a better approximation for practical carrier profile in silicon epitaxial layers.
因此，用此法测量的外延层分布是实际载流子分布的一种较好的近似。
In addition, the absorption coefficients and the dopant concentration doped of these samples weren't the same for X-ray excitation, therefore, their light emission efficiencies were also different.
这些样品本身对X射线的吸收系数及掺杂浓度不一样，因此它们的光发射效率也有所差别。