TDDB
基本解释
- 时间依赖介质击穿
英汉例句
- And it should also be noted that the TDDB properties and lifetime of refractory metal gate capacitors with thinner EOT are better than those of polysilicon gate capacitors.
进一步研究发现具有更薄EOT的难熔金属栅电极PMOS电容在TDDB特性以及寿命等方面均优于多晶硅栅电极的相应结构. - TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor,and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验,提出了精确测量和表征陷阱密度及累积失效率的方法。 - Another regularity between the J-V curves and oxidation pressures was found and we blamed the oxidation pressures for the major problem.Finally, TDDB measurements were made to support our supposition.
发现其电流曲线也有规律性存在，而我们归咎其主因为氧化时的压力，最后并作了TDDB的量测来验证我们的假设。 - TDDB Test and Parameter Extraction of Gate Oxides
栅氧化层TDDB可靠性评价试验及模型参数提取 - EM, HCI and TDDB Test Structure Design
测试结构设计